Characterisation of the LPE grown InGaAsP/InP hetero-structures : IR-LED at 1.66 μm used for the remote monitoring of methane gas
Identifieur interne : 001131 ( Russie/Analysis ); précédent : 001130; suivant : 001132Characterisation of the LPE grown InGaAsP/InP hetero-structures : IR-LED at 1.66 μm used for the remote monitoring of methane gas
Auteurs : RBID : Pascal:97-0328744Descripteurs français
- Pascal (Inist)
- Diode électroluminescente, Détection IR, Détecteur de gaz, Télédétection, Méthane, Hétérojonction, Croissance cristalline, Indium Phosphure, Gallium Arséniure, Indium Arséniure, Gallium Phosphure, Séparation phase, Absorbance, Effet pression, Pression partielle, Courbe spinodale, InGaAsP, InP, As Ga In P, In P.
- Wicri :
- concept : Télédétection.
English descriptors
- KwdEn :
Abstract
Combined TEM, HREM, ED, SIMS, X-ray and electroluminescence studies were used to characterise in detail a highly effective IR-LED emitting at the wavelength 1.66 μm and based on buried heterostructure In0.88Ga0.12As0.26P0.74/In0.72Ga0.28As0.62P0.38/In0.53Ga0.47As/InP grown by liquid-phase epitaxy. The InGaAsP epilayers were found to be well lattice-matched, dislocation free and of good structural quality. A tentative explanation is presented for the spinodal decomposition observed in InGaAsP alloys. A new type of selective methane gas sensor has been developed and fabricated on the basis of the IR-light emitting diode mentioned above. It is shown that the proposed type of sensor can be used for the quantitative remote control of methane gas concentration (0.2-100%) via a fibre glass line up to the distance of 2 x 1 km.
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Pascal:97-0328744Le document en format XML
<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Characterisation of the LPE grown InGaAsP/InP hetero-structures : IR-LED at 1.66 μm used for the remote monitoring of methane gas</title><author><name sortKey="Volkov, V V" uniqKey="Volkov V">V. V. Volkov</name><affiliation wicri:level="4"><inist:fA14 i1="01"><s1>University of Antwerp, EMAT, Groenenborgerlaan 171</s1><s2>2020 Antwerpen</s2><s3>BEL</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ></inist:fA14><country>Belgique</country><wicri:noRegion>2020 Antwerpen</wicri:noRegion><orgName type="university">Université d'Anvers</orgName><placeName><settlement type="city">Anvers</settlement><region type="district" nuts="2">Province d'Anvers</region></placeName></affiliation><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>N.S. Kurnakov Institute of General and Inorganic Chemistry, RAS, Leninsky Prospect 31, GSP-1</s1><s2>117907 Moscow</s2><s3>RUS</s3><sZ>1 aut.</sZ><sZ>3 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>Russie</country><placeName><settlement type="city">Moscou</settlement><region>District fédéral central</region></placeName></affiliation></author><author><name sortKey="Van Landuyt, J" uniqKey="Van Landuyt J">J. Van Landuyt</name><affiliation wicri:level="4"><inist:fA14 i1="01"><s1>University of Antwerp, EMAT, Groenenborgerlaan 171</s1><s2>2020 Antwerpen</s2><s3>BEL</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ></inist:fA14><country>Belgique</country><wicri:noRegion>2020 Antwerpen</wicri:noRegion><orgName type="university">Université d'Anvers</orgName><placeName><settlement type="city">Anvers</settlement><region type="district" nuts="2">Province d'Anvers</region></placeName></affiliation></author><author><name sortKey="Marushkin, K M" uniqKey="Marushkin K">K. M. Marushkin</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>N.S. Kurnakov Institute of General and Inorganic Chemistry, RAS, Leninsky Prospect 31, GSP-1</s1><s2>117907 Moscow</s2><s3>RUS</s3><sZ>1 aut.</sZ><sZ>3 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>Russie</country><placeName><settlement type="city">Moscou</settlement><region>District fédéral central</region></placeName></affiliation><affiliation wicri:level="4"><inist:fA14 i1="03"><s1>University of Antwerp, MITAC, Universiteitsplein 1</s1><s2>2610 Wilrijk, Antwerpen</s2><s3>BEL</s3><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>Belgique</country><wicri:noRegion>2610 Wilrijk, Antwerpen</wicri:noRegion><orgName type="university">Université d'Anvers</orgName><placeName><settlement type="city">Anvers</settlement><region type="district" nuts="2">Province d'Anvers</region></placeName></affiliation></author><author><name sortKey="Gijbels, R" uniqKey="Gijbels R">R. Gijbels</name><affiliation wicri:level="4"><inist:fA14 i1="03"><s1>University of Antwerp, MITAC, Universiteitsplein 1</s1><s2>2610 Wilrijk, Antwerpen</s2><s3>BEL</s3><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>Belgique</country><wicri:noRegion>2610 Wilrijk, Antwerpen</wicri:noRegion><orgName type="university">Université d'Anvers</orgName><placeName><settlement type="city">Anvers</settlement><region type="district" nuts="2">Province d'Anvers</region></placeName></affiliation></author><author><name sortKey="Ferauge, C" uniqKey="Ferauge C">C. Ferauge</name><affiliation wicri:level="4"><inist:fA14 i1="03"><s1>University of Antwerp, MITAC, Universiteitsplein 1</s1><s2>2610 Wilrijk, Antwerpen</s2><s3>BEL</s3><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>Belgique</country><wicri:noRegion>2610 Wilrijk, Antwerpen</wicri:noRegion><orgName type="university">Université d'Anvers</orgName><placeName><settlement type="city">Anvers</settlement><region type="district" nuts="2">Province d'Anvers</region></placeName></affiliation></author><author><name sortKey="Vasilyev, M G" uniqKey="Vasilyev M">M. G. Vasilyev</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>N.S. Kurnakov Institute of General and Inorganic Chemistry, RAS, Leninsky Prospect 31, GSP-1</s1><s2>117907 Moscow</s2><s3>RUS</s3><sZ>1 aut.</sZ><sZ>3 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>Russie</country><placeName><settlement type="city">Moscou</settlement><region>District fédéral central</region></placeName></affiliation></author><author><name sortKey="Shelyakin, A A" uniqKey="Shelyakin A">A. A. Shelyakin</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>N.S. Kurnakov Institute of General and Inorganic Chemistry, RAS, Leninsky Prospect 31, GSP-1</s1><s2>117907 Moscow</s2><s3>RUS</s3><sZ>1 aut.</sZ><sZ>3 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>Russie</country><placeName><settlement type="city">Moscou</settlement><region>District fédéral central</region></placeName></affiliation></author><author><name sortKey="Sokolovsky, A A" uniqKey="Sokolovsky A">A. A. Sokolovsky</name><affiliation wicri:level="1"><inist:fA14 i1="04"><s1>Institute of Radioelectronics, Vvedenskogo sq. 1, Phryasino</s1><s2>Moscow Region</s2><s3>RUS</s3><sZ>8 aut.</sZ></inist:fA14><country>Russie</country><wicri:noRegion>Moscow Region</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">97-0328744</idno><date when="1997">1997</date><idno type="stanalyst">PASCAL 97-0328744 INIST</idno><idno type="RBID">Pascal:97-0328744</idno><idno type="wicri:Area/Main/Corpus">019A18</idno><idno type="wicri:Area/Main/Repository">019370</idno><idno type="wicri:Area/Russie/Extraction">001131</idno></publicationStmt><seriesStmt><idno type="ISSN">0022-0248</idno><title level="j" type="abbreviated">J. cryst. growth</title><title level="j" type="main">Journal of crystal growth</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Absorbance</term><term>Crystal growth</term><term>Gallium Arsenides</term><term>Gallium Phosphides</term><term>Gas detector</term><term>Heterojunction</term><term>Indium Arsenides</term><term>Indium Phosphides</term><term>Infrared detection</term><term>Light emitting diode</term><term>Methane</term><term>Partial pressure</term><term>Phase separation</term><term>Pressure effect</term><term>Remote sensing</term><term>Spinodal curve</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Diode électroluminescente</term><term>Détection IR</term><term>Détecteur de gaz</term><term>Télédétection</term><term>Méthane</term><term>Hétérojonction</term><term>Croissance cristalline</term><term>Indium Phosphure</term><term>Gallium Arséniure</term><term>Indium Arséniure</term><term>Gallium Phosphure</term><term>Séparation phase</term><term>Absorbance</term><term>Effet pression</term><term>Pression partielle</term><term>Courbe spinodale</term><term>InGaAsP</term><term>InP</term><term>As Ga In P</term><term>In P</term></keywords><keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Télédétection</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Combined TEM, HREM, ED, SIMS, X-ray and electroluminescence studies were used to characterise in detail a highly effective IR-LED emitting at the wavelength 1.66 μm and based on buried heterostructure In<sub>0.88</sub>Ga<sub>0.12</sub>As<sub>0.26</sub>P<sub>0.74</sub>/In<sub>0.72</sub>Ga<sub>0.28</sub>As<sub>0.62</sub>P<sub>0.38</sub>/In<sub>0.53</sub>Ga<sub>0.47</sub>As/InP grown by liquid-phase epitaxy. The InGaAsP epilayers were found to be well lattice-matched, dislocation free and of good structural quality. A tentative explanation is presented for the spinodal decomposition observed in InGaAsP alloys. A new type of selective methane gas sensor has been developed and fabricated on the basis of the IR-light emitting diode mentioned above. It is shown that the proposed type of sensor can be used for the quantitative remote control of methane gas concentration (0.2-100%) via a fibre glass line up to the distance of 2 x 1 km.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0022-0248</s0></fA01><fA02 i1="01"><s0>JCRGAE</s0></fA02><fA03 i2="1"><s0>J. cryst. growth</s0></fA03><fA05><s2>173</s2></fA05><fA06><s2>3-4</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Characterisation of the LPE grown InGaAsP/InP hetero-structures : IR-LED at 1.66 μm used for the remote monitoring of methane gas</s1></fA08><fA11 i1="01" i2="1"><s1>VOLKOV (V. V.)</s1></fA11><fA11 i1="02" i2="1"><s1>VAN LANDUYT (J.)</s1></fA11><fA11 i1="03" i2="1"><s1>MARUSHKIN (K. M.)</s1></fA11><fA11 i1="04" i2="1"><s1>GIJBELS (R.)</s1></fA11><fA11 i1="05" i2="1"><s1>FERAUGE (C.)</s1></fA11><fA11 i1="06" i2="1"><s1>VASILYEV (M. G.)</s1></fA11><fA11 i1="07" i2="1"><s1>SHELYAKIN (A. A.)</s1></fA11><fA11 i1="08" i2="1"><s1>SOKOLOVSKY (A. A.)</s1></fA11><fA14 i1="01"><s1>University of Antwerp, EMAT, Groenenborgerlaan 171</s1><s2>2020 Antwerpen</s2><s3>BEL</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ></fA14><fA14 i1="02"><s1>N.S. Kurnakov Institute of General and Inorganic Chemistry, RAS, Leninsky Prospect 31, GSP-1</s1><s2>117907 Moscow</s2><s3>RUS</s3><sZ>1 aut.</sZ><sZ>3 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></fA14><fA14 i1="03"><s1>University of Antwerp, MITAC, Universiteitsplein 1</s1><s2>2610 Wilrijk, Antwerpen</s2><s3>BEL</s3><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></fA14><fA14 i1="04"><s1>Institute of Radioelectronics, Vvedenskogo sq. 1, Phryasino</s1><s2>Moscow Region</s2><s3>RUS</s3><sZ>8 aut.</sZ></fA14><fA20><s1>285-296</s1></fA20><fA21><s1>1997</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>13507</s2><s5>354000061679600080</s5></fA43><fA44><s0>0000</s0><s1>© 1997 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>27 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>97-0328744</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Journal of crystal growth</s0></fA64><fA66 i1="01"><s0>NLD</s0></fA66><fC01 i1="01" l="ENG"><s0>Combined TEM, HREM, ED, SIMS, X-ray and electroluminescence studies were used to characterise in detail a highly effective IR-LED emitting at the wavelength 1.66 μm and based on buried heterostructure In<sub>0.88</sub>Ga<sub>0.12</sub>As<sub>0.26</sub>P<sub>0.74</sub>/In<sub>0.72</sub>Ga<sub>0.28</sub>As<sub>0.62</sub>P<sub>0.38</sub>/In<sub>0.53</sub>Ga<sub>0.47</sub>As/InP grown by liquid-phase epitaxy. The InGaAsP epilayers were found to be well lattice-matched, dislocation free and of good structural quality. A tentative explanation is presented for the spinodal decomposition observed in InGaAsP alloys. A new type of selective methane gas sensor has been developed and fabricated on the basis of the IR-light emitting diode mentioned above. It is shown that the proposed type of sensor can be used for the quantitative remote control of methane gas concentration (0.2-100%) via a fibre glass line up to the distance of 2 x 1 km.</s0></fC01><fC02 i1="01" i2="X"><s0>001D03F15</s0></fC02><fC02 i1="02" i2="X"><s0>001C04A</s0></fC02><fC03 i1="01" i2="X" l="FRE"><s0>Diode électroluminescente</s0><s5>50</s5></fC03><fC03 i1="01" i2="X" l="ENG"><s0>Light emitting diode</s0><s5>50</s5></fC03><fC03 i1="01" i2="X" l="SPA"><s0>Diodo electroluminescente</s0><s5>50</s5></fC03><fC03 i1="02" i2="X" l="FRE"><s0>Détection IR</s0><s5>51</s5></fC03><fC03 i1="02" i2="X" l="ENG"><s0>Infrared detection</s0><s5>51</s5></fC03><fC03 i1="02" i2="X" l="SPA"><s0>Detección IR</s0><s5>51</s5></fC03><fC03 i1="03" i2="X" l="FRE"><s0>Détecteur de gaz</s0><s5>52</s5></fC03><fC03 i1="03" i2="X" l="ENG"><s0>Gas detector</s0><s5>52</s5></fC03><fC03 i1="03" i2="X" l="SPA"><s0>Detector de gas</s0><s5>52</s5></fC03><fC03 i1="04" i2="X" l="FRE"><s0>Télédétection</s0><s5>53</s5></fC03><fC03 i1="04" i2="X" l="ENG"><s0>Remote sensing</s0><s5>53</s5></fC03><fC03 i1="04" i2="X" l="SPA"><s0>Teledetección</s0><s5>53</s5></fC03><fC03 i1="05" i2="X" l="FRE"><s0>Méthane</s0><s2>NK</s2><s2>FX</s2><s5>54</s5></fC03><fC03 i1="05" i2="X" l="ENG"><s0>Methane</s0><s2>NK</s2><s2>FX</s2><s5>54</s5></fC03><fC03 i1="05" i2="X" l="GER"><s0>Methan</s0><s2>NK</s2><s2>FX</s2><s5>54</s5></fC03><fC03 i1="05" i2="X" l="SPA"><s0>Metano</s0><s2>NK</s2><s2>FX</s2><s5>54</s5></fC03><fC03 i1="06" i2="X" l="FRE"><s0>Hétérojonction</s0><s5>55</s5></fC03><fC03 i1="06" i2="X" l="ENG"><s0>Heterojunction</s0><s5>55</s5></fC03><fC03 i1="06" i2="X" l="SPA"><s0>Heterounión</s0><s5>55</s5></fC03><fC03 i1="07" i2="X" l="FRE"><s0>Croissance cristalline</s0><s5>56</s5></fC03><fC03 i1="07" i2="X" l="ENG"><s0>Crystal growth</s0><s5>56</s5></fC03><fC03 i1="07" i2="X" l="GER"><s0>Kristallwachstum</s0><s5>56</s5></fC03><fC03 i1="07" i2="X" l="SPA"><s0>Crecimiento cristalino</s0><s5>56</s5></fC03><fC03 i1="08" i2="X" l="FRE"><s0>Indium Phosphure</s0><s2>NC</s2><s2>NA</s2><s5>57</s5></fC03><fC03 i1="08" i2="X" l="ENG"><s0>Indium Phosphides</s0><s2>NC</s2><s2>NA</s2><s5>57</s5></fC03><fC03 i1="08" i2="X" l="SPA"><s0>Indio Fosfuro</s0><s2>NC</s2><s2>NA</s2><s5>57</s5></fC03><fC03 i1="09" i2="X" l="FRE"><s0>Gallium Arséniure</s0><s2>NC</s2><s2>FX</s2><s2>NA</s2><s5>58</s5></fC03><fC03 i1="09" i2="X" l="ENG"><s0>Gallium Arsenides</s0><s2>NC</s2><s2>FX</s2><s2>NA</s2><s5>58</s5></fC03><fC03 i1="09" i2="X" l="SPA"><s0>Galio Arseniuro</s0><s2>NC</s2><s2>FX</s2><s2>NA</s2><s5>58</s5></fC03><fC03 i1="10" i2="X" l="FRE"><s0>Indium Arséniure</s0><s2>NC</s2><s2>NA</s2><s5>59</s5></fC03><fC03 i1="10" i2="X" l="ENG"><s0>Indium Arsenides</s0><s2>NC</s2><s2>NA</s2><s5>59</s5></fC03><fC03 i1="10" i2="X" l="SPA"><s0>Indio Arseniuro</s0><s2>NC</s2><s2>NA</s2><s5>59</s5></fC03><fC03 i1="11" i2="X" l="FRE"><s0>Gallium Phosphure</s0><s2>NC</s2><s2>FX</s2><s2>NA</s2><s5>60</s5></fC03><fC03 i1="11" i2="X" l="ENG"><s0>Gallium Phosphides</s0><s2>NC</s2><s2>FX</s2><s2>NA</s2><s5>60</s5></fC03><fC03 i1="11" i2="X" l="SPA"><s0>Galio Fosfuro</s0><s2>NC</s2><s2>FX</s2><s2>NA</s2><s5>60</s5></fC03><fC03 i1="12" i2="X" l="FRE"><s0>Séparation phase</s0><s5>61</s5></fC03><fC03 i1="12" i2="X" l="ENG"><s0>Phase separation</s0><s5>61</s5></fC03><fC03 i1="12" i2="X" l="SPA"><s0>Separación fase</s0><s5>61</s5></fC03><fC03 i1="13" i2="X" l="FRE"><s0>Absorbance</s0><s5>62</s5></fC03><fC03 i1="13" i2="X" l="ENG"><s0>Absorbance</s0><s5>62</s5></fC03><fC03 i1="13" i2="X" l="SPA"><s0>Absorbancia</s0><s5>62</s5></fC03><fC03 i1="14" i2="X" l="FRE"><s0>Effet pression</s0><s5>63</s5></fC03><fC03 i1="14" i2="X" l="ENG"><s0>Pressure effect</s0><s5>63</s5></fC03><fC03 i1="14" i2="X" l="GER"><s0>Druckeinfluss</s0><s5>63</s5></fC03><fC03 i1="14" i2="X" l="SPA"><s0>Efecto presión</s0><s5>63</s5></fC03><fC03 i1="15" i2="X" l="FRE"><s0>Pression partielle</s0><s5>64</s5></fC03><fC03 i1="15" i2="X" l="ENG"><s0>Partial pressure</s0><s5>64</s5></fC03><fC03 i1="15" i2="X" l="GER"><s0>Partialdruck</s0><s5>64</s5></fC03><fC03 i1="15" i2="X" l="SPA"><s0>Presión parcial</s0><s5>64</s5></fC03><fC03 i1="16" i2="X" l="FRE"><s0>Courbe spinodale</s0><s5>65</s5></fC03><fC03 i1="16" i2="X" l="ENG"><s0>Spinodal curve</s0><s5>65</s5></fC03><fC03 i1="16" i2="X" l="SPA"><s0>Curva spinodal</s0><s5>65</s5></fC03><fC03 i1="17" i2="X" l="FRE"><s0>InGaAsP</s0><s4>INC</s4><s5>72</s5></fC03><fC03 i1="18" i2="X" l="FRE"><s0>InP</s0><s4>INC</s4><s5>73</s5></fC03><fC03 i1="19" i2="X" l="FRE"><s0>As Ga In P</s0><s4>INC</s4><s5>74</s5></fC03><fC03 i1="20" i2="X" l="FRE"><s0>In P</s0><s4>INC</s4><s5>75</s5></fC03><fN21><s1>188</s1></fN21></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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